Novel encapsulated ITO/arc-ZnO:TiO2 antireflective passivating layer for TCO conducting substrate prepared by simultaneous radio frequency-magnetron sputtering
Identifieur interne : 000825 ( Main/Repository ); précédent : 000824; suivant : 000826Novel encapsulated ITO/arc-ZnO:TiO2 antireflective passivating layer for TCO conducting substrate prepared by simultaneous radio frequency-magnetron sputtering
Auteurs : RBID : Pascal:13-0220385Descripteurs français
- Pascal (Inist)
- Addition étain, Passivation, Radiofréquence, Pulvérisation cathodique, Nanomatériau, Couche mince antiréfléchissante, Couche ITO, Recuit, Caractéristique optique, Propriété optique, Propriété électrique, Caractéristique électrique, Diffraction RX, Structure cristalline, Grosseur grain, Granulométrie, Agrégation, Coefficient absorption, Facteur transmission, Facteur réflexion, Indice réfraction, Oxyde d'indium, Oxyde de zinc, Oxyde de titane, Multicouche, Matériau conducteur, Matériau transparent, Nanocomposite, Oxygène, Matériau dopé, 8107B, 4279W, 7867, 6146, ITO, ZnO, TiO2, 7363, 6837P.
- Wicri :
- concept : Oxygène.
English descriptors
- KwdEn :
- Absorption coefficients, Aggregation, Annealing, Antireflection thin film, Cathode sputtering, Conducting materials, Crystal structure, Doped materials, Electrical characteristic, Electrical properties, Grain size, Grain size analysis, ITO layers, Indium oxide, Multilayers, Nanocomposites, Nanostructured materials, Optical characteristic, Optical properties, Oxygen, Passivation, Radiofrequency, Reflectivity, Refractive index, Tin additions, Titanium oxide, Transmittance, Transparent material, XRD, Zinc oxide.
Abstract
A thermally stable multilayered transparent conducting oxide utilizing nanocomposite ZnO:TiO2 antireflection thin film (arc-ZnO:TiO2) on an indium-tin oxide (ITO) substrate has been prepared by radio frequency-magnetron sputtering. The effects of post-deposition annealing on the morphological, structural, optical and electrical properties were investigated with the aim to find the best conditions for the antireflection substrate. The X-ray diffraction behaviors of mixed type crystalline structures preferred at [222] and [101] between ITO and ZnO were observed, respectively. The grain size increased from 37.9 nm to 46.9 nm due to the aggregation of smaller grain during the annealing process. Average transmittances of approximately 82% were observed for all the samples in the range between 440 nm and 760 nm. A corresponding reduction in the reflectance of about 11% and 3% compared to bare ITO was achieved. The refractive index increased from 1.82 up to 2.0 due to the change in the packing density. For all ranges of annealing conditions, the arc-ZnO:TiO2 layers conserved the low resistivity of ITO at 1.96 × 10-4 Ω In other words, the oxygen consumed in the annealing process improved the crystallinity of the film without much change to the resistivity of the ITO-based substrate. The increment of the root mean square roughness from 2.12 nm to 3.21 nm evidenced by the atomic force microscopy analysis was supported by the increment of grain growth. .
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Novel encapsulated ITO/arc-ZnO:TiO<sub>2</sub> antireflective passivating layer for TCO conducting substrate prepared by simultaneous radio frequency-magnetron sputtering</title><author><name sortKey="Abdullah, M H" uniqKey="Abdullah M">M. H. Abdullah</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM)</s1><s2>40450 Shah Alam, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>40450 Shah Alam, Selangor</wicri:noRegion></affiliation></author><author><name sortKey="Ismail, L N" uniqKey="Ismail L">L. N. Ismail</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM)</s1><s2>40450 Shah Alam, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>40450 Shah Alam, Selangor</wicri:noRegion></affiliation></author><author><name sortKey="Mamat, M H" uniqKey="Mamat M">M. H. Mamat</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM)</s1><s2>40450 Shah Alam, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>40450 Shah Alam, Selangor</wicri:noRegion></affiliation></author><author><name sortKey="Musa, M Z" uniqKey="Musa M">M. Z. Musa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM)</s1><s2>40450 Shah Alam, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>40450 Shah Alam, Selangor</wicri:noRegion></affiliation></author><author><name sortKey="Rusop, M" uniqKey="Rusop M">M. Rusop</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM)</s1><s2>40450 Shah Alam, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>40450 Shah Alam, Selangor</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA (UiTM)</s1><s2>40450 Shah Alam, Selangor</s2><s3>MYS</s3><sZ>5 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>40450 Shah Alam, Selangor</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0220385</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0220385 INIST</idno><idno type="RBID">Pascal:13-0220385</idno><idno type="wicri:Area/Main/Corpus">000B54</idno><idno type="wicri:Area/Main/Repository">000825</idno></publicationStmt><seriesStmt><idno type="ISSN">0167-9317</idno><title level="j" type="abbreviated">Microelectron. eng.</title><title level="j" type="main">Microelectronic engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Aggregation</term><term>Annealing</term><term>Antireflection thin film</term><term>Cathode sputtering</term><term>Conducting materials</term><term>Crystal structure</term><term>Doped materials</term><term>Electrical characteristic</term><term>Electrical properties</term><term>Grain size</term><term>Grain size analysis</term><term>ITO layers</term><term>Indium oxide</term><term>Multilayers</term><term>Nanocomposites</term><term>Nanostructured materials</term><term>Optical characteristic</term><term>Optical properties</term><term>Oxygen</term><term>Passivation</term><term>Radiofrequency</term><term>Reflectivity</term><term>Refractive index</term><term>Tin additions</term><term>Titanium oxide</term><term>Transmittance</term><term>Transparent material</term><term>XRD</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition étain</term><term>Passivation</term><term>Radiofréquence</term><term>Pulvérisation cathodique</term><term>Nanomatériau</term><term>Couche mince antiréfléchissante</term><term>Couche ITO</term><term>Recuit</term><term>Caractéristique optique</term><term>Propriété optique</term><term>Propriété électrique</term><term>Caractéristique électrique</term><term>Diffraction RX</term><term>Structure cristalline</term><term>Grosseur grain</term><term>Granulométrie</term><term>Agrégation</term><term>Coefficient absorption</term><term>Facteur transmission</term><term>Facteur réflexion</term><term>Indice réfraction</term><term>Oxyde d'indium</term><term>Oxyde de zinc</term><term>Oxyde de titane</term><term>Multicouche</term><term>Matériau conducteur</term><term>Matériau transparent</term><term>Nanocomposite</term><term>Oxygène</term><term>Matériau dopé</term><term>8107B</term><term>4279W</term><term>7867</term><term>6146</term><term>ITO</term><term>ZnO</term><term>TiO2</term><term>7363</term><term>6837P</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Oxygène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A thermally stable multilayered transparent conducting oxide utilizing nanocomposite ZnO:TiO<sub>2</sub> antireflection thin film (arc-ZnO:TiO<sub>2</sub>) on an indium-tin oxide (ITO) substrate has been prepared by radio frequency-magnetron sputtering. The effects of post-deposition annealing on the morphological, structural, optical and electrical properties were investigated with the aim to find the best conditions for the antireflection substrate. The X-ray diffraction behaviors of mixed type crystalline structures preferred at [222] and [101] between ITO and ZnO were observed, respectively. The grain size increased from 37.9 nm to 46.9 nm due to the aggregation of smaller grain during the annealing process. Average transmittances of approximately 82% were observed for all the samples in the range between 440 nm and 760 nm. A corresponding reduction in the reflectance of about 11% and 3% compared to bare ITO was achieved. The refractive index increased from 1.82 up to 2.0 due to the change in the packing density. For all ranges of annealing conditions, the arc-ZnO:TiO<sub>2</sub> layers conserved the low resistivity of ITO at 1.96 × 10<sup>-4</sup> Ω In other words, the oxygen consumed in the annealing process improved the crystallinity of the film without much change to the resistivity of the ITO-based substrate. The increment of the root mean square roughness from 2.12 nm to 3.21 nm evidenced by the atomic force microscopy analysis was supported by the increment of grain growth. .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0></fA01><fA02 i1="01"><s0>MIENEF</s0></fA02><fA03 i2="1"><s0>Microelectron. eng.</s0></fA03><fA05><s2>108</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Novel encapsulated ITO/arc-ZnO:TiO<sub>2</sub> antireflective passivating layer for TCO conducting substrate prepared by simultaneous radio frequency-magnetron sputtering</s1></fA08><fA11 i1="01" i2="1"><s1>ABDULLAH (M. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>ISMAIL (L. N.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAMAT (M. H.)</s1></fA11><fA11 i1="04" i2="1"><s1>MUSA (M. Z.)</s1></fA11><fA11 i1="05" i2="1"><s1>RUSOP (M.)</s1></fA11><fA14 i1="01"><s1>NANO-Electronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM)</s1><s2>40450 Shah Alam, Selangor</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA (UiTM)</s1><s2>40450 Shah Alam, Selangor</s2><s3>MYS</s3><sZ>5 aut.</sZ></fA14><fA20><s1>138-144</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20003</s2><s5>354000503845110260</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>38 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0220385</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A thermally stable multilayered transparent conducting oxide utilizing nanocomposite ZnO:TiO<sub>2</sub> antireflection thin film (arc-ZnO:TiO<sub>2</sub>) on an indium-tin oxide (ITO) substrate has been prepared by radio frequency-magnetron sputtering. The effects of post-deposition annealing on the morphological, structural, optical and electrical properties were investigated with the aim to find the best conditions for the antireflection substrate. The X-ray diffraction behaviors of mixed type crystalline structures preferred at [222] and [101] between ITO and ZnO were observed, respectively. The grain size increased from 37.9 nm to 46.9 nm due to the aggregation of smaller grain during the annealing process. Average transmittances of approximately 82% were observed for all the samples in the range between 440 nm and 760 nm. A corresponding reduction in the reflectance of about 11% and 3% compared to bare ITO was achieved. The refractive index increased from 1.82 up to 2.0 due to the change in the packing density. For all ranges of annealing conditions, the arc-ZnO:TiO<sub>2</sub> layers conserved the low resistivity of ITO at 1.96 × 10<sup>-4</sup> Ω In other words, the oxygen consumed in the annealing process improved the crystallinity of the film without much change to the resistivity of the ITO-based substrate. The increment of the root mean square roughness from 2.12 nm to 3.21 nm evidenced by the atomic force microscopy analysis was supported by the increment of grain growth. .</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="X"><s0>001D11C02A</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A40E</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="05" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Addition étain</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Tin additions</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Passivation</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Passivation</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Radiofréquence</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Radiofrequency</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Radiofrecuencia</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Pulvérisation cathodique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" 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i1="16" i2="X" l="FRE"><s0>Granulométrie</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Grain size analysis</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="GER"><s0>Teilchengroessenbestimmung</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Granulometría</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Agrégation</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Aggregation</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Coefficient absorption</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Absorption coefficients</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Transmittance</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="GER"><s0>Transmission faktor</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Facteur réflexion</s0><s5>20</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Reflectivity</s0><s5>20</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>21</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Refractive index</s0><s5>21</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Indium oxide</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="GER"><s0>Indiumoxid</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Indio óxido</s0><s5>22</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="GER"><s0>Zinkoxid</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>23</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Oxyde de titane</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Titanium oxide</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="GER"><s0>Titanoxid</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Titanio óxido</s0><s5>24</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Multicouche</s0><s5>25</s5></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Multilayers</s0><s5>25</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Matériau conducteur</s0><s5>26</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Conducting materials</s0><s5>26</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Matériau transparent</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Transparent material</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Material transparente</s0><s5>27</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Nanocomposite</s0><s5>28</s5></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Nanocomposites</s0><s5>28</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Oxygène</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Oxygen</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>4279W</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="34" i2="3" l="FRE"><s0>6146</s0><s4>INC</s4><s5>59</s5></fC03><fC03 i1="35" i2="3" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="36" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="37" i2="3" l="FRE"><s0>TiO2</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="38" i2="3" l="FRE"><s0>7363</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="39" i2="3" l="FRE"><s0>6837P</s0><s4>INC</s4><s5>86</s5></fC03><fN21><s1>203</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Surfaces, Coatings and Nanostructured Materials (NANOSMAT)</s1><s2>7</s2><s3>Prague CZE</s3><s4>2012-09-18</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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